2SC4452

Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features · Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity. · Very small-sized package permitting the 2SC4452applied sets to be made small and slim. Package Dimensions unit:mm 2059B [2SC4452] 0.425 0.3 3 0~0.1 0.15 1.250 2.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 40 40 15 5 200 500 40 150 150 –55 to +150 0.2 Unit V V V V mA mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob 50 Conditions VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=10V, IC=10mA VCB=5V, f=1MHz 2 100 70 3 140 100 4 200 Ratings min typ max 0.1 0.1 50* 450 90 750 1.4 4.0 200* Unit µA µA MHz pF * : The 2SC4452 is classified by 10mA hFE as follows : Marking : ST hFE rank : 2, 3, 4 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel...