2SD468
Silicon NPN Epitaxial
REJ03G0766-0200 (Previous ADE-208-1135) Rev.2.00 Aug.10.2005
Application
• Low frequency p...
2SD468
Silicon
NPN Epitaxial
REJ03G0766-0200 (Previous ADE-208-1135) Rev.2.00 Aug.10.2005
Application
Low frequency power amplifier Complementary pair with 2SB562
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
1. Emitter 2. Collector 3. Base
3 2
www.DataSheet.co.kr
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
Datasheet pdf - http://www.DataSheet4U.net/
2SD468
Electrical Characteristics
(Ta = 25°C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Notes: 1. The 2SD468 is grouped by hFE as follows. 2. Pulse test B C 85 to170 120 to 240 Min 25 20 5 — 85 — — — — Typ — — — — — 0.2 0.79 190 22 Max — — — 1.0 240 0.5 1.0 — — Unit V V V µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 IC = 0.8 A, IB = 0.08 A*2 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 0.5...