STY60NM50. Y60NM50 Datasheet

Y60NM50 Datasheet PDF, Equivalent


Part Number

Y60NM50

Description

STY60NM50

Manufacture

STMicroelectronics

Total Page 8 Pages
PDF Download
Download Y60NM50 Datasheet


Y60NM50 Datasheet
STY60NM50
N-CHANNEL 500V - 0.045- 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STY60NM50
500V
< 0.05
60 A
n TYPICAL RDS(on) = 0.045
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
www.DataSheet.co.kr
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
500 V
500 V
±30 V
60 A
37.8
A
240 A
560 W
6 KV
4.5 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1)ISD 60A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
1/8
Datasheet pdf - http://www.DataSheet4U.net/

Y60NM50 Datasheet
STY60NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.22
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
30
1.4
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
± 10
°C/W
°C/W
°C
Unit
A
J
Unit
V
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30Awww.DataSheet.co.kr
Min.
3
Typ.
4
0.045
Max.
5
0.05
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Forward Transconductance
Input Capacitance
VDS > ID(on) x RDS(on)max,
ID = 30A
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
35
7500
980
200
1.5
Max.
Unit
S
pF
pF
pF
2/8
Datasheet pdf - http://www.DataSheet4U.net/


Features Datasheet pdf N-CHANNEL 500V - 0.045Ω - 60A Max247 Z ener-Protected MDmesh™Power MOSFET TY PE STY60NM50 n n n n n n n STY60NM50 VDSS 500V RDS(on) < 0.05Ω ID 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt A ND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GA TE CHARGE LOW GATE INPUT RESISTANCE TIG HT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE 2 1 3 Max247 DESCRIPT ION The MDmesh™ is a new revolutionar y MOSFET technology that associates the Multiple Drain process with the Compan y’s PowerMESH™ horizontal layout. T he resulting product has an outstanding low on-resistance, impressively high d v/dt and excellent avalanche characteri stics. The adoption of the Company’s proprietary strip technique yields over all dynamic performance that is signifi cantly better than that of similar comp etition’s products. APPLICATIONS The MDmesh™ family is very suitable for i ncreasing power density of high voltage converters allowing system miniaturization and higher efficiencies. INTERNAL SCHEMA.
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