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2SC4463 Dataheets PDF



Part Number 2SC4463
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC4463 Datasheet2SC4463 Datasheet (PDF)

2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base.

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2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cre Min 30 20 3 — — 60 600 — Typ — — — — — 120 1000 0.35 Max — — — 0.5 1.0 — — 0.65 MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz f OSC = 230 Mhz (0 dBm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”. CG NF — — 21 4.0 — — dB dB 2 2SC4463 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 10 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current 2,000 Gain Bandwidth Product fT (MHz) VCE = 10 V Reverse Transfer Capacitance Cre (pF) 5.0 Reverse Transfer Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz Emitter Common 1,600 2.0 1.0 0.5 1,200 800 400 0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 1 2 5 10 20 Collector Current IC (mA) 50 3 2SC4463 Conversion Gain vs. Collector Current 25 Conversion Gain CG (dB) 10 Noise Figure vs. Collector Current Noise Figure NF (dB) 20 8 15 10 5 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) fout = 30 MHz Rg = 50 Ω 6 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) fout = 30 MHz Rg = 50 Ω 1 2 3 4 Collector Current IC (mA) 5 4 2 0 2 4 6 8 Collector Current IC (mA) 10 0 Conversion Gain, noise figure vs. Oscillating Injection Voltage 25 Conversion Gain CG (dB) CG Noise Figure NF (dB) 20 8 10 15 VCC = 12 V IC = 2 mA f = 200 MHz fosc = 230 MHz fout = 30 MHz Rg = 50 Ω NF 6 10 4 5 2 0 0 –8 –6 –4 –2 0 2 Oscillating Injection Voltage VOSC (dBm) 4 2SC4463 Conversion Gain, Noise Figure Test Circuit fosc = 230 MHz (0 dBm) 1.5 p 2200 p VCC 560 L2 f= 200 MHz 56 p Ferrite Bead L4 27 p fout = 230 MHz RL = 50 Ω D.U.T. L1 4.2 p L3 2200 p 330 2200 p 18 p 80 p Unit R : Ω C:F VBB L1 : φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ5 mm L2 : φ0.5 mm Enameled Copper Wire 4 Turns Inside Dia φ4 mm L3 : φ0.2 mm Enameled Copper Wire 6 Tur.


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