2SC4466

2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 V VEBO 6 V IC 6 A IB 3 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 10max 10max 80min 50min∗ 1.5max 20typ 110typ µA µA V V MHz pF ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 30 10 3 10 –5 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ External Dimensions MT-100(TO3P) 2.0 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) I C– V CE Characteristics (Typical) 6 200mA 150mA 100mA 80mA 50mA 4 30mA 2 20mA IB=10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 6 Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp) 2 4...