2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)
Application : Audio and General Pur...
2SC4468
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1695)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO VEBO IC IB PC Tj Tstg
140
V
6
V
10
A
4
A
100(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=200V
VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
Ratings 10max 10max 140min 50min∗ 0.5max 20typ 250typ
Unit µA µA V
V MHz pF
∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
60
12
5
10
–5
0.5
IB2 (A)
–0.5
ton (µs)
0.24typ
tstg (µs)
4.32typ
tf (µs)
0.40typ
External Dimensions MT-100(TO3P)
2.0
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
4.0
19.9±0.3
20.0min 4.0max
a
ø3.2±0.1
b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
DC Current Gain hFE
Collector Current IC(A) 400mA
I C– V CE Characteristics (Typical)
10
300mA
200mA
150mA
8
100mA
75mA 6
50mA
4 20mA
2 IB=10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
1
IC=10A 5A
0
0
0.5
1.0
1.5
2.0
Base Current IB(A)
Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Te...
