2SJ569LS
Ordering number : ENN6898
2SJ569LS
P-Channel Silicon MOSFET
2SJ569LS
Ultrahigh-Speed Switching Applications
Features
•...
Description
Ordering number : ENN6898
2SJ569LS
P-Channel Silicon MOSFET
2SJ569LS
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2078B
[2SJ569]
10.0
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching.
4.5
2.8
3.2
16.1
16.0
0.9 1.2
14.0
3.6
0.75
0.7
1
2 3
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS
Specifications
Absolute Maximum Ratings at Ta=25°C
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2.55
2.55
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol VDSS VGSS ID IDP PD Tch Tstg
Conditions
0.6
Ratings --300 ±30 --5
Unit V V A A W W °C °C
PW≤10µs, duty cycle≤1% Tc=25°C
-20 2.0 30 150 --55 to +150
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) Conditions ID=-1mA, VGS=0 IG=± 100µA, VDS=0 VDS=-300V, VGS=0 VGS=± 25V, VDS=0 VDS=-10V, ID=--1mA --1.5 Ratings min --300 ± 30 --100 ±10 --2.5 typ max Unit V V µA µA V
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious ph...
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