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AP4032GYT-HF

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4032GYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Prof...


Advanced Power Electronics

AP4032GYT-HF

File Download Download AP4032GYT-HF Datasheet


Description
AP4032GYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D 30V 9mΩ 15.5A S Description AP4032 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D D D S S S G PMPAK ® 3 x 3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 www.DataSheet.co.kr Rating 30 +20 15.5 12.4 60 3.57 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 35 Unit ℃/W ℃/W 1 201206011 Data and specifications subject to change without notice Datasheet pdf - http://www.DataSheet4U.net/ AP4032GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON...




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