CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier
Cree’s CGHV96100F2 is a gallium...
CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs
transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96 100F2 Package Type : 440210
Typical Performance Over 8.4-9.6 GHz
Parameter Linear Gain Output Power Power Gain Power Added Efficiency 8.4 GHz 12.7 151 10.8 44
(TC = 25˚C)
8.8 GHz 12.4 147 10.6 42
9.0 GHz 12.7 150
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9.2 GHz 13.1 152 10.7 43
9.4 GHz 13.1 140 10.5 45
9.6 GHz 12.4 131 10.2 45
Units dB W dB %
10.7 44
Note: Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (7.9 W)
Features
Applications
8.4 - 9.6 GHz Operation 145 W POUT typical 10 dB Power Gain 45 % Typical PAE
2012 Rev 1.0 – May
Marine Radar Weather Monitoring Air Traffic Control Maritime Vessel Traffic Control Port Security
50 Ohm Internally Matched <0.3 dB Power Droop
Subject to change without notice. www.c...
