RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
RFHA1006
225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER...
RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
RFHA1006
225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
VGS Pin 1
Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB Power Added Efficiency 60% -40°C to 85°C Operating Temperature
RF IN Pin 2,3
RF OUT / VDS Pin 6,7
GND BASE
Functional Block Diagram
Product Description
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1006 is an input matched GaN
transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwid...
