Ordering number:ENN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power ...
Ordering number:ENN544G
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
Package Dimensions
unit:mm 2010C
[2SA1011/2SC2344]
10.2 3.6 5.1 4.5 1.3
2.7 18.0 5.6
1.2 0.8
14.0
15.1
6.3
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
w w w . D a t a S
2.55
2.55
Conditions
2.7
( ) : 2SA1011
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB
Ratings (–)180 (–)160 Unit V V V A A W
˚C ˚C
h
e
e
t
.
c
o
.
k
r
(–)6 (–)1.5 (–)3 25 150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage
Rank hFE D 60 to 120
Symbol ICBO IEBO hFE fT Cob VBE
E 100 to 200
Conditions VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)10mA
Ratings min typ max (–)10 (–)10 60* 100 (30) 23 (–)1.5 200*
Unit µA µA MHz pF pF V
* : The 2SA1011/2SC2344 are classified by 300mA hFE as follows :
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extrem...