A683

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 5.9± 0.2 Unit: mm 4.9± 0.2 q q Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 Unit V 2.54± 0.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA683 2SA684 2SA683 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol emitter voltage 2SA684 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 0.45–0.1 0.45–0.1 1.27 +0.2 V A A W ˚C ˚C www.DataSheet.co.kr 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25˚C) Symbol ICBO Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA VCE = –5V, IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20 30 – 0.4 –1.2 V V MHz pF 340 min typ max – 0.1 Unit µA V 2SA683 2SA684 2SA683 2SA684 VCBO VCEO V...