2.5 to 6 GHz GaN HEMT Power Amplifier
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier Applications
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Communications Electronic Warfare Test Instrument...
Description
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier Applications
Communications Electronic Warfare Test Instrumentation EMC Amplifier
Product Features
Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm PAE: 35 % Small Signal Gain: 26 dB Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical Dimensions: 11.4 x 17.3 x 3.0 mm
Functional Block Diagram
1 2
10 9
3
8
4 5
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7 6
General Description
TriQuint’s TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint’s production-released 0.25um GaN on SiC process. Operating from 2.5 GHz to 6 GHz, it achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related opportunities.
Pin out Configuration
Pin #
1,5 2,4,7,9 3 6 8 10
Symbol
Vg NC RF In Vd Bot RF Out Vd Top
Ordering Information
Part No.
TGA2576-FL
ECCN
3A001.b.2.a
Description
2.5-6 GHz Power Amplifier
Preliminary Data Sheet: Rev A
08/25/11
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Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
Datasheet pdf - http://www.DataSheet4U.co.kr/
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier Specifications Absolute Maximum Ratings
Parameter
Drain to Gate Voltage, Vd - Vg Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Diss...
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