2N5087

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 1 2 BASE 1 EMITTER 3 STRAIGHT LEAD BULK PACK 12 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2N 5087 AYWW G G 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5087 2N5087G 2N5087RLRAG Package TO−92 TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 5000 Units / Bulk 2000/T ape & Reel †For information on tape and reel specifications, including part orientation and tape ...