T1G6001528-Q3

T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 www.DataSheet.net/ 2 General Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and RoHS compliant Evaluation Boards are available upon request. Pin Configuration Pin # 1 2 Flange Symbol Vd/RF OUT Vg/RF IN Source Ordering Information Part No. T1G6001528-Q3 T1G6001528-Q3 EVB1 Preliminary Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc. - 1 of 15- ECCN EAR99 EAR99 Description Packaged Transistor 5-6 GHz Eval Board Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.DataSheet4U.co.kr/ T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transisto...