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TQP3M6004

TriQuint Semiconductor

Low Band Dual LNA

TQP3M6004 Datasheet Low Band Dual LNA (700-915 MHz) Functional Block Diagram RFinA VgateA RFinB VgateB RFoutA VdrainA R...


TriQuint Semiconductor

TQP3M6004

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Description
TQP3M6004 Datasheet Low Band Dual LNA (700-915 MHz) Functional Block Diagram RFinA VgateA RFinB VgateB RFoutA VdrainA RFoutB VdrainB Features 0.32 dB Noise Figure 20.7 dB Gain 12.5 dBm IIP3 20 dBm P1dB 4 x 4 mm package RoHS compliant, Pb-free A B Ground and Ground and source Source A, Source B connections may be connections through through the paddle package paddle or package pins Applications Base Station receivers Tower-mounted amplifiers Product Description The TriQuint TQP3M6004 is a packaged low noise dual pHEMT discrete device operating from 700 - 915 MHz. This broadband device is useful in a number of different applications, and is particularly well suited for cellular or WiMAX base station or tower-mounted amplifier products. TQP3M6004 consists of a single monolithic GaAs die mounted in a small 4 x 4 QFN package. This device is a discrete dual LNA device is intended to be used as a balanced pair in wireless networks applications. www.DataSheet.net/ Package Style 6004 5555 0950 Electrical Characteristics1 Parameter Gain Saturated Output Power Noise Figure Input IP3 Drain Current Typ 20.7 20.7 0.32 12.5 70 Units dB dBm dB dBm mA 16-lead QFN 4 x 4 mm Note 1: Test Conditions: Vd = 4 V, Freq. = 830 MHz, Id = 70 mA per channel, TA = 25 ˚C. Content will be added or may be revised. For additional information and latest specifications, see our website: www.triquint.com May 2010 – Rev B 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ TQP3M6004 Dat...




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