2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal Technologies
2N5088 2N5089
MMBT5088 MMBT5089
C
E C B
...
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal Technologies
2N5088 2N5089
MMBT5088 MMBT5089
C
E C B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
2N5088 2N5089 2N5088 2N5089
Value
30 25 35 30 4.5 100 -55 to +150
Units
V V V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
2N5088 2N5089 625 5.0 83.3 200
Max
*MMBT5088 *MMBT5089 350 2.8 357
Units
PD RθJC RθJA
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
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