140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5109
RF & MICROWAVE DISCR...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5109
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
Silicon
NPN, To-39 packaged VHF/UHF
Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Silicon
NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TC = 75ºC (1) Derate above 25ºC 2.5 20 Watts mW/ ºC
Note 1. Total Device dissipation at TA = 25ºC is 1 Watt.
MSC1304.PDF 10-25-99
2N5109
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 20 40 Value Typ. Max. 20 100 Unit Vdc Vdc µA µA
(on)
HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc) 5 40 120 -
DYNAMIC
Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC =...