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FTA06N65

IPS

N-Channel MOSFET

FTP06N65 FTA06N65 N-Channel MOSFET Applications: • Adaptor • LCD Panel Power VDSS 650V RDS(ON) (Max.) 1.25 Ω ID 6.0A ...


IPS

FTA06N65

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Description
FTP06N65 FTA06N65 N-Channel MOSFET Applications: Adaptor LCD Panel Power VDSS 650V RDS(ON) (Max.) 1.25 Ω ID 6.0A Features: Lead Free Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves G D Ordering Information PART NUMBER FTP06N65 FTA06N65 D S TO-220 Not to Scale G D S TO-220F Not to Scale G PACKAGE TO-220 TO-220F BRAND FTP06N65 FTA06N65 S Absolute Maximum Ratings Symbol VDSS ID ID@ 100 C IDM PD VGS EAS IAS dv/dt TL TPKG TJ and TSTG o TC=25 oC unless otherwise specified FTP06N65 (NOTE *1) 6.0 www.DataSheet.net/ Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 C Gate-to-Source Voltage Single Pulse Avalanche Engergy L=16.6 mH, ID=6.2 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *3) Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range o FTA06N65 650 6.0* Units V A Figure 3 Figure 6 125 1.00 ± 30 320 Figure 8 3.0 300 260 -55 to 150 31 0.25 (NOTE *2) W W/ C V mJ o V/ns o C *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient FTP06N65 1.0 62 FTA06N65 4.0 62 Unit...




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