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TGA2510-SG

TriQuint Semiconductor

Ku Band 2 Watt Packaged Amplifier

Product Data Sheet August 5, 2008 Ku Band 2 Watt Packaged Amplifier • • • • • • • • • TGA2510-SG 33.5 dBm Midband Psat...


TriQuint Semiconductor

TGA2510-SG

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Product Data Sheet August 5, 2008 Ku Band 2 Watt Packaged Amplifier TGA2510-SG 33.5 dBm Midband Psat 25 dB Nominal Gain 7 dB Typical Input Return Loss 10 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Package Dimensions: 9.4 x 6.4 x 1.8 mm (0.370 x 0.250 x 0.071 inches) Key Features and Performance Preliminary Measured Performance Bias Conditions: Vd=7.5V Id=650mA 30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 10 S21 S11 5 S22 0 -5 -10 -15 -20 Primary Applications S11,S22 (dB) www.DataSheet.net/ S21 (dB) VSAT Point to Point Frequency (GHz) 36 Pout @ Pin=+14dBm (dBm) 35 34 33 32 31 30 29 28 27 26 11 12 13 14 15 16 17 18 19 Pout PAE 60 50 45 40 35 30 25 20 15 10 Frequency (GHz) Note: Datasheet is subject to change without notice. PAE @ Pin=+14dBm (%) 55 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA2510-SG TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.15 W 150 C 320 C -65 to 150...




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