TGA4509

Product Data Sheet August 5, 2008 27 - 31 GHz 1W Power Amplifier Key Features TGA4509 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in) Primary Applications Point to Point Radio Point to Multi-point Radio LMDS Satellite Ground Terminal Fixtured Measured Performance 30 25 20 15 10 S21 Bias Conditions: Vd = 6 V, Id =420 mA www.DataSheet.net/ Sij (dB) 5 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 25 32 30 1000 S 22 S11 26 27 28 29 30 31 32 33 34 F re q u e n c y (G H z ) Pout (dBm) & Gain (dB) 22 20 18 16 14 12 10 -12 -9 -6 -3 0 3 6 9 12 15 18 21 600 Gain 400 IDS 200 0 Pin (dBm) Note: Datasheet is subject to change without notice. IDS (mA) Data taken @ 30 GHz 28 26 24 800 Pout TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4509 TABLE I MAXIMUM RATINGS 1/ Symbol V+ V|Ig| I+ PD PIN TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Parameter Positive Supply Voltage Negative Supply Voltage Range Gate Current Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 7V -5 V to 0 V 35.2 mA 930 mA TBD 22 dBm 150 °C 320 °C -65 °C to 150 °C...