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TGA4706-FC Dataheets PDF



Part Number TGA4706-FC
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 77 GHz Medium Power Amplifier
Datasheet TGA4706-FC DatasheetTGA4706-FC Datasheet (PDF)

TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm Measured Performance Bias conditions: Vd = 3.5 V, Idq = 125 mA, Vg = +0.2 V Typical Primary Applications • • www.DataSheet.net/ 16 14 Pout @ 77 GHz (dBm) 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Input Power (dBm) .

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TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm Measured Performance Bias conditions: Vd = 3.5 V, Idq = 125 mA, Vg = +0.2 V Typical Primary Applications • • www.DataSheet.net/ 16 14 Pout @ 77 GHz (dBm) 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Input Power (dBm) 20 15 Gain, IRL, ORL (dB) 10 5 0 -5 -10 -15 -20 -25 76 77 78 79 80 Frequency (GHz) 81 82 83 Gain IRL ORL Automotive Radar E-Band Communication Product Description The TriQuint TGA4706-FC is a flip-chip medium power amplifier designed to operate at the automotive radar frequencies band. The TGA4706FC is designed using TriQuint’s proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for simplified assembly and low interconnect inductance. Die reliability is enhanced by using TriQuint’s BCB polymeric passivation process. The TGA4706-FC typically provides 14 dBm saturated output power with 15 dB small signal gain at 77 GHz. Lead-free and RoHS compliant. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA4706-FC Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id Ig Pin Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Parameter Drain to Gate Voltage Value 6V 4V -2 to +0.45 V 240 mA 4 mA 15 dBm Notes 2/ 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. www.DataSheet.net/ 2/ Table II Recommended Operating Conditions Symbol Vd Vg Idq Drain Voltage Gate Voltage Drain Current (Quiescent) Parameter 1/ Value 3.5 V +0.2 V 125 mA 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA4706-FC Table III RF Characterization Table Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical SYMBOL Gain IRL ORL Psat Pout PARAMETER Small Signal Gain Input Return Loss Output Return Loss Saturated Output Power Output Power (Input Power=-3dBm) TEST CONDITIONS f = 76-77 GHz f = 76-77 GHz f = 76-77 GHz f = 77 GHz f = 77 GHz MINIMUM NOMINAL 15 4 15 14 UNITS dB dB dB dBm dBm 9 12 www.DataSheet.net/ 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA4706-FC Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 130.0° C Value Pd = 0.6 W Tchannel = 150° C Tm = 2.4E+7 Hrs θjc = 33.3 (° C/W) Tchannel = 93.8° C Tm = 3.2E+10 Hrs Notes 1/ 2/ Thermal Resistance, θjc Under RF Drive Vd = 3.5 V Vg = +0.2 V Idq = 125 mA Pd = 0.438 W Tbaseplate = 85° C Mounting Temperature Storage Temperature Refer to Solder Reflow Profiles (pp 10) -65 to 150° C 1/ For a median life of 2.4E+07 hours, Power Dissipation is limited to Pd(max) = (150° C – Tbase° C)/θjc. www.DataSheet.net/ 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs Channel Temperature 1.E+13 1.E+12 Median Lifetime (Hours) 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET11 25 50 75 100 125 150 175 200 Channel Temperature (°C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA4706-FC Measured Data on Flipped Die on Carrier Board Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical 20 18 16 Gain (dB) 14 12 10 8 6 70 72 74 76 78 80 Frequency (GHz) www.DataSheet.net/ 82 84 86 5 0 Return Loss (dB) -5 -10 -15 -20 -25 -30 70 72 74 76 78 80 Frequency (GHz) 82 84 86 IRL ORL 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] November 2009 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA4706-FC Measured Data on Flipped Die on Carrier Board Bias conditions: Vd = 3.5 V, Vg = +0.2 V, Idq = 125 mA Typical Output Power (dBm) & Gain (dB) 20 18 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 www.DataSheet.net/ Pout @77 GHz Gain @77 GHz 2 4 6 8 10 12 Input Power (dBm) 180 170 Drain Current (mA) 160 .


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