IRF7313QPBF

PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. www.DataSheet.net/ SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = ...