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2N5154L Dataheets PDF



Part Number 2N5154L
Manufacturers Semicoa Semiconductor
Logo Semicoa Semiconductor
Description NPN Transistor
Datasheet 2N5154L Datasheet2N5154L Datasheet (PDF)

Data Sheet No. 2N5154L Type 2N5154L Geometry 9201 Polarity NPN Qual Level: JAN - JANS Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases. Generic Part Number: 2N5154L REF: MIL-PRF-19500/544 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Coll.

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Data Sheet No. 2N5154L Type 2N5154L Geometry 9201 Polarity NPN Qual Level: JAN - JANS Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases. Generic Part Number: 2N5154L REF: MIL-PRF-19500/544 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC Rating 80 100 5.5 2 10 15 Unit V V V A A mJ Watt o mW/ C o PT TJ TSTG 1.0 5.7 -65 to +200 -65 to +200 C C o Data Sheet No. 2N5154L Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Base-Emitter Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = -2 V, TC = 150 C o Symbol V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX Min 80 ------------- Max --1.0 1.0 1.0 1.0 50 500 Unit V µA mA µA mA µA µA ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.5 A, pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Symbol hFE1 hFE2 hFE3 hFE4 VBE VBE(sat)1 VBE(sat)2 VCE(sat)1 VCE(sat)2 Min 50 70 40 25 ----------- Max --200 ----1.45 1.45 2.2 0.75 1.5 Unit --------V dc V dc V dc V dc V dc Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 mA, f = 10 MHz Common Emitter, Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Symbol |hfe| Min 7.0 Max --- Unit --- hfe COBO 50 --- --250 --pF Switching Time Delay Time IC = 5 A, IB1 = 500 mA Storage Time IB2 = -500 mA Fall Time VBE(off) = 3.7 V Turn-Off Time RL = 6 ohms Symbol tON ts tf tOFF Min --------- Max 0.5 1.4 0.5 1.5 Unit µs µs µs µs .


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