Document
Preliminary Datasheet
RJL6014DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C) Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
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Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW 10 s, duty cycle 1% Value at Tc = 25C STch = 25C, Tch 150C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EAR Pch Note2 ch-c Tch Tstg
Note3
Ratings 600 30 15 45 15 45 4 0.87 35 3.57 150 –55 to +150
Unit V V A A A A A mJ W C/W C C
R07DS0262EJ0200 Rev.2.00 Mar 01, 2011
Page 1 of 6
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RJL6014DPP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 2.0 — — — — — — — — — — — — — Typ — — — — 0.520 1700 167 20 31 23 101 22 46 7.8 20.8 1.05 180 Max — 10 ±0.1 4.0 0.635 — — — — — — — — — — 1.75 — Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 7.5 A VGS = 10 V RL = 40 Rg = 10 VDD = 480 V VGS = 10 V ID = 15 A IF = 15 A, VGS = 0 Note5 IF = 15 A, VGS = 0 diF/dt = 100 A/s
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R07DS0262EJ0200 Rev.2.00 Mar 01, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJL6014DPP
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
PW =
10
Typical Output Characteristics
20 Ta = 25°C Pulse Test
6 V, 8 V, 10 V
μs
5V 4.8 V
Drain Current ID (A)
0
μs
Drain Current ID (A)
10
10
16
1
Operation in this area is limited by RDS(on)
12
4.6 V
0.1
8
4.4 V
0.01
Ta = 25°C 1 shot
4
4.2 V VGS = 4 V
0.001 0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) (Ω)
10 VGS = 10 V Ta = 25°C Pulse Test
Typical Transfer Characteristics
100 VDS = 10 V Pulse Test
Drain Current ID (A)
10 Tc = 75°C 1
25°C
1
0.1
−25°C
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0.01 0 2 4 6 8
0.1 1 10 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) (Ω)
Static Drain to Source on State Resistance vs. Temperature (Typical)
Pulse Test VGS = 10 V 1.6 ID = 15 A 1.2
Body-Drain Diode Reverse Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
2.0
100
0.8 3A 0.4
7.5 A
di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current IDR (A)
R07DS0262EJ0200 Rev.2.00 Mar 01, 2011
Page 3 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJL6014DPP
Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10000 Ciss
Preliminary
Dynamic Input Characteristics (Typical)
ID = 15 A Ta = 25 °C
Capacitance C (pF)
1000
600 VDS 400
VDD = 480 V 300 V 100 V
12
100
Coss
8
10 VGS = 0 f = 1 MHz Ta = 25°C 100 200
Crss
200
VDD = 480 V 300 V 100 V 20 40 60 80
4
1 0
0 100
300
0
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical)
50
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
Reverse Drain Current IDR (A)
40
VGS = 0 V Ta = 25 °C Pulse Test
4
30
3 ID = 10 mA 1 mA 0.1 mA
20 10
2 1
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0 0 0.4 0.8 1.2 1.6 2.0
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (°C)
R07DS0262EJ0200 Rev.2.00 Mar 01, 2011
Page 4 of 6
Gate to Source Voltage VGS (V)
800
VGS
16
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJL6014DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Im.