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RJL6014DPP Dataheets PDF



Part Number RJL6014DPP
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET
Datasheet RJL6014DPP DatasheetRJL6014DPP Datasheet (PDF)

Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 .

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Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EAR Pch Note2 ch-c Tch Tstg Note3 Ratings 600 30 15 45 15 45 4 0.87 35 3.57 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS0262EJ0200 Rev.2.00 Mar 01, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL6014DPP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 2.0 — — — — — — — — — — — — — Typ — — — — 0.520 1700 167 20 31 23 101 22 46 7.8 20.8 1.05 180 Max — 10 ±0.1 4.0 0.635 — — — — — — — — — — 1.75 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 7.5 A VGS = 10 V RL = 40  Rg = 10  VDD = 480 V VGS = 10 V ID = 15 A IF = 15 A, VGS = 0 Note5 IF = 15 A, VGS = 0 diF/dt = 100 A/s www.DataSheet.net/ R07DS0262EJ0200 Rev.2.00 Mar 01, 2011 Page 2 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL6014DPP Preliminary Main Characteristics Maximum Safe Operation Area 100 PW = 10 Typical Output Characteristics 20 Ta = 25°C Pulse Test 6 V, 8 V, 10 V μs 5V 4.8 V Drain Current ID (A) 0 μs Drain Current ID (A) 10 10 16 1 Operation in this area is limited by RDS(on) 12 4.6 V 0.1 8 4.4 V 0.01 Ta = 25°C 1 shot 4 4.2 V VGS = 4 V 0.001 0.1 1 10 100 1000 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 VGS = 10 V Ta = 25°C Pulse Test Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Drain Current ID (A) 10 Tc = 75°C 1 25°C 1 0.1 −25°C www.DataSheet.net/ 0.01 0 2 4 6 8 0.1 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature (Typical) Pulse Test VGS = 10 V 1.6 ID = 15 A 1.2 Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 1000 2.0 100 0.8 3A 0.4 7.5 A di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) R07DS0262EJ0200 Rev.2.00 Mar 01, 2011 Page 3 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL6014DPP Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) 10000 Ciss Preliminary Dynamic Input Characteristics (Typical) ID = 15 A Ta = 25 °C Capacitance C (pF) 1000 600 VDS 400 VDD = 480 V 300 V 100 V 12 100 Coss 8 10 VGS = 0 f = 1 MHz Ta = 25°C 100 200 Crss 200 VDD = 480 V 300 V 100 V 20 40 60 80 4 1 0 0 100 300 0 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 50 Gate Charge Qg (nC) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V Reverse Drain Current IDR (A) 40 VGS = 0 V Ta = 25 °C Pulse Test 4 30 3 ID = 10 mA 1 mA 0.1 mA 20 10 2 1 www.DataSheet.net/ 0 0 0.4 0.8 1.2 1.6 2.0 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) R07DS0262EJ0200 Rev.2.00 Mar 01, 2011 Page 4 of 6 Gate to Source Voltage VGS (V) 800 VGS 16 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL6014DPP Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Im.


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