RJL60S5DPE

Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching Features  Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain D G 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C www.DataSheet.net/ (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Pch Note2 ch-c Tch Tstg Note1 Ratings 600 (+30), (20) 20 40 20 40 125 1.0 150 –55 to +150 Unit V V A A A A W C/W C C R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL60S5DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR...