T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications • Wideband and narrowband defense and commerci...
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power
Transistor
Applications Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers –– Test instrumentation –– Cellular infrastructure Available Package
Product Features Frequency: DC to 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Output Power (P3dB): >7 W at 6 GHz Lead-free and RoHS compliant Low thermal resistance package
Package Information
Package Type Q3 Description 5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo
www.DataSheet.net/
General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Ordering Information
Material No. 1075579 1081733 Part No. T1G6000528-Q3 T1G6000528-Q3EVB3 Description Packaged part Narrowband 3.0 to 3.5 GHz evaluation board ECCN EAR99 EAR99
Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc.
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