T1G6003028-FS

T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power (P3dB): 30 W at 6 GHz Linear Gain: >14 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram 1 2 www.DataSheet.net/ General Description The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and RoHS compliant Evaluation Boards are available upon request. Pin Configuration Pin # 1 2 Flange Symbol Vd/RF OUT Vg/RF IN Source Ordering Information Material No. 1080206 1093989 Part No. T1G6003028-FS T1G6003028-FSEVB1 Description Packaged part: Flangeless 5.4-5.9 GHz Eval. Board ECCN EAR99 EAR99 Data Sheet: Rev A 05/23/2012 © 2012 TriQuint Semiconductor, Inc. - 1 of 11- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® Datasheet pdf - http://www.DataSheet4U.co.kr/ T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications...