TGF2022-48

Product Datasheet September 7, 2007 DC - 20 GHz Discrete power pHEMT TGF2022-48 Key Features and Performance Frequency Range: DC - 20 GHz > 37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 4.8mm x 0.35μm Power pHEMT Nominal Bias Vd = 8-12V, Idq = 360-600mA (Under RF Drive, Id rises from 360mA to 1200mA) Chip Dimensions: 0.57 x 2.42 x 0.10 mm (0.022 x 0.095 x 0.004 in) Product Description The TriQuint TGF2022-48 is a discrete 4.8 mm pHEMT which operates from DC-20 GHz. The TGF2022-48 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-48 typically provides > 37 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-48 appropriate for high efficiency applications. The TGF2022-48 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-48 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications www.DataSheet.net/ 35 30 Maximum Gain (dB) 25 MSG 20 15 MAG 10 5 0 0 2 4 6 8 10 12 14 16 Frequency (GHz) 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 [email protected] www.triquint.com Rev - Datasheet pdf - http://www....