TGF2023-02

TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm Primary Applications Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical www.DataSheet.net/ Defense & Aerospace Broadband Wireless Product Description The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-02 typically provides 41 dBm of saturated output power with power gain of 18dB at 3 GHz. The maximum power added efficiency is 58% which makes the TGF2023-02 appropriate for high efficiency applications. Lead-free and RoHS compliant . Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 © Rev D 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Table I Absolute Maximum Ratings 1/ Symbol Vd Vg Vdg Id Ig Pin Tch Drain Voltage Gate Voltage Range Drain-Gate Voltage Drain Current Gate Current Input Continuous Wave Power Channel Temperature TGF2023-02 Notes 2/ Parameter Value 40 V -50 to 0 V 80 V 2.5 A 1...