GaAs FET
CLY2 Datasheet
High-Power Packaged GaAs FET
Description
The CLY2 is a high-breakdown voltage GaAs FET designed for PA ...
Description
CLY2 Datasheet
High-Power Packaged GaAs FET
Description
The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY2 exhibits +23.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 14.5 dB. Power added efficiencies to 55% are achievable.
Applications
Power Amplifiers for WLAN transceivers Driver Amplifiers for WLAN or mobile phone basestations Low Noise Amplifier for basestations and antenna amplifiers
Features
For frequencies up to 3 GHz
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Package Outline, MW6
Wide operating voltage range: 2 to 6 V
4
POUT 23.5 dBm typical at VD=3V, f=1.8GHz High efficiency: better than 55 % Nfmin 0.79 dB typical at 900 MHz
5 6
3
Low Cost
2 1
Pin Configuration: 1 & 6: Gate 2 & 5: Source 3 & 4: Drain
For additional information and latest specifications, see our website: www.triquint.com Revision C, December 14, 2005
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
CLY2 Datasheet Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 50 °C) 1) Thermal Resistance Channel-soldering point 1)
1)
Symbol VDS VDG VGS ID TCh Tstg Ptot
Values 9 12 -6 600 150 -55...+150 900
Unit V V V mA °C °C mW
RthChS
≤110
...
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