FP2189

FP2189 1-Watt HFET Product Features 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package MTTF >100 Years Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP2189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHScompliant and green SOT-89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Function Input / Gate Output / Drain Ground Pin No. 1 3 2, 4 Specifications DC Parameter Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2) Typical Performance (5) Units Min mA mS V 445 Typ 615 280 -2.1 Max 705 www.DataSheet.net/ Paramete...