TGF2961-SD

TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: TOI: 44 dBm 31 dBm Psat, 30 dBm P1dB Gain: 18 dB Input Return Loss: -15 dB Output Return Loss: -7 dB Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) Package Dimensions: 4.5 x 4 x 1.5 mm 900 MHz Application Board Performance Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical Primary Applications Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID www.DataSheet.net/ Product Description The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device’s ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request. RoHS and Lead-Free compliant Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 © Rev C 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id Ig Pin Tchannel Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power Channel Temperature TGF2961-SD Notes 2/...