2N5179

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 Characterized with S-Parameters 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mWatts mW/ ºC MSC1305.PDF 10-25-99 2N5179 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol VCEO(sus) BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 12 20 2.5 Value Typ. Max. .02 Unit Vdc Vdc Vdc µA (on) HFE VBE(sat) VCE(sat) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) 25 250 1.0 0.4 Vdc Vdc DYNAMIC Symbol fT CCB...