TQM7M5013

TQM7M5013 Quad-Band Input Power Controlled EDGE PAM Applications Quad-Band GSM850 / GSM900 / DCS / PCS GSM / EDGE / WEDGE Handsets GSM / EDGE / WEDGE Wireless Cards Product Features Digital Control Interface Low Current At Backed-Off Power Levels Input Power Controlled – GMSK & 8PSK LB Has 4 modes – HP, MP, LP, & ULP HB Has 3 modes – HP, LP, & ULP HBT/PHEMT High Efficiency Technology High–Power Linearity Standard LB & HB Paths 50 Ω Input & Output Impedance Halogen-Free 11 Pin Package General Description The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions. This highly efficient PAM significantly improves talk-time while still providing an easy to use solution in a small form factor. The PA output power is controlled by the input power coming from the transceiver in both GMSK and 8PSK modes and so does not require a Vramp input. Additionally, the small 5 mm x 5 mm package requires minimum board space and allows for high levels of phone integration. Functional Block Diagram RF_in_DCS Vbatt HBEn Vmode0 Vmode1 LBEn GND RF_in_GSM CONTROL CIRCUIT RF_out_DCS Vcc RF_out_GSM Pin Configuration Pin No. 1 2 3 4 5 Label RF_in_DCS Vbatt HBEn Vmode0 Vmode1 7 GND Pin No. 6 8 9 10 11 Backside Pad Label LBEn RF_in_GSM RF_out_DCS VCC RF_out_GSM GND GSMK Electrical Specifications Parameter GSM850 Typical Value GSM900 DCS HPM Pout 35.3 35 33.3 MPM Pout ...