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IRLR3410PBF Dataheets PDF



Part Number IRLR3410PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRLR3410PBF DatasheetIRLR3410PBF Datasheet (PDF)

PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω G S ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching.

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PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω G S ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current… Repetitive Avalanche Energy… Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds D-PAK TO-252AA www.DataSheet.net/ I-PAK TO-251AA Absolute Maximum Ratings Max. 17 12 60 79 0.53 ± 16 150 9.0 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ. ––– ––– ––– Max. 1.9 50 110 Units °C/W www.irf.com 1 12/7/04 Datasheet pdf - http://www.DataSheet4U.co.kr/ IRLR/U3410PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. Typ. Max. Units Conditions 100 ––– ––– V VGS = 0V, ID = 250µA ––– 0.122 ––– V/°C Reference to 25°C, I D = 1mA ––– ––– 0.105 VGS = 10V, ID = 10A „ ––– ––– 0.125 W VGS = 5.0V, ID = 10A „ ––– ––– 0.155 VGS = 4.0V, ID = 9.0A „ 1.0 ––– 2.0 V VDS = VGS, ID = 250µA 7.7 ––– ––– S VDS = 25V, ID = 9.0A… ––– ––– 25 VDS = 100V, VGS = 0V µA ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 34 ID = 9.0A ––– ––– 4.8 nC VDS = 80V ––– ––– 20 VGS = 5.0V, See Fig. 6 and 13 „… ––– 7.2 ––– VDD = 50V ––– 53 ––– ID = 9.0A ns ––– 30 ––– RG = 6.0Ω, VGS = 5.0V ––– 26 ––– RD = 5.5Ω, See Fig. 10 „… Between lead, ––– 4.5 ––– nH 6mm (0.25in.) G from package ––– 7.5 ––– and center of die contact† ––– 800 ––– VGS = 0V ––– 160 ––– pF VDS = 25V ––– 90 ––– ƒ = 1.0MHz, See Fig. 5… www.DataSheet.net/ D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) … Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 ––– ––– showing the A G integral reverse ––– ––– 60 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V „ ––– 140 210 ns TJ = 25°C, IF =9.0A ––– 740 1100 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12) TJ ≤ 175°C  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2% … Uses IRL530N data and test conditions ƒ ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, † This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com Datasheet pdf - http://www.DataSheet4U.co.kr/ IRLR/U3410PbF 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 10 2.5V 1 1 2.5V 20µs PULSE WIDTH T J = 25°C 1 10 0.1 0.1 100 A 0.1 0.1 20µs PULSE WIDTH T J = 175°C 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics www.DataSheet.net/ Fig 2. .


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