GB30RF60K

Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.04V HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design TOTALLY LEAD-FREE Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance 23 R 24 Absolute Maximum Ratings Parameter Inverter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Diode Maximum Forward Current Power Dissipation Input Rectifier Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I2 t (Non Repetitive) Brake Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage Symbol VCES VGES IC www.DataSheet.net/ Test Conditions Ratings 600 ±20 Units V A Continuos Pulsed One IGBT 50/60Hz sine pulse sine pulse 25°C / 80°C 25°C 25°C 25°C 80°C 50 / 27 100 100 129 800 30 310 525 600 ±20 ICM IFM PD V RRM IF(AV) IFSM I2t VCES VGES IC ICM PD V RRM TJ TSTG VISOL W V A A2s V A W V °C V Rated VR...