2N5237

Data Sheet No. 2N5237 Type 2N5237 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5237 REF: MIL-PRF-19500/394 TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25oC Thermal Impedance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RJC RJA TJ TSTG Rating 120 150 10 10 1.0 5.7 5.0 50 0.020 0.175 -65 to +200 -65 to +200 Unit V V V A mW mW/oC Watt mW/oC o C/mW o C/mW o C C o Data Sheet No. 2N5237 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 0.1 A, pulsed Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 110 V VBE = 0.5 V, VCE = 150 V VBE = -0.5 V, VCE = 150 V, TC = +150oC Base-Emitter Cutoff Current VEB = 5 V Collector-Base Cutoff Current VCB = 80 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO1 ICEX ICEX2 IEBO ICBO Min 150 120 7.0 ----------- Max --- Unit V V --10 10 100 0.1 0.1 V µA...