TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238...
TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range
2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit
VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020
0
170 200
Vdc Vdc Vdc Adc W
0
TO- 5* 2N4150, 2N5237, 2N5238
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) Unit
C/mW
0.175
2)
Derate linearly @ 5.7 mW/0C for TA > +250C Derate linearly @ 50 mW/0C for TC > +250C
TO-39* (TO-205AD) 2N4150S, 2N5237S, 2N5238S
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 7.0 70 120 170 10 10 10 Vdc
Vdc
Collector-Emitter Cutoff Current VEB = 0.5 Vdc, VCE = 60 Vdc VEB = 0.5 Vdc, VCE = 110 Vdc VEB = 0.5 Vdc, VCE = 160 Vdc
ICEX
µAdc
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2N4150, 2N4...