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2N5307 Dataheets PDF



Part Number 2N5307
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Darlington Transistor
Datasheet 2N5307 Datasheet2N5307 Datasheet (PDF)

2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V .

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2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5307 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N5307 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C =10 mA, I B = 0 I C = 0.1 µA, I E = 0 I E = 0.1 µ A, IC = 0 VCB = 40 V, IE = 0 VCB = 40 V, IE = 0, TA = 100 °C VEB = 12 V, IC = 0 40 40 12 0.1 20 0.1 V V V µA µA µA ON CHARACTERISTICS* hFE VCE( sat) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 100 mA IC = 200 mA, I B = 0.2 mA IC = 200 mA, I B = 0.2 mA IC = 200 mA, VCE = 5.0 V 2,000 6,000 20,000 1.4 1.6 1.5 V V V SMALL SIGNAL CHARACTERISTICS Ccb hfe Collector-Base Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz IC =2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC =2.0 mA, VCE = 5.0 V, f = 10 MHz 2,000 6.0 10 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% .


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