Document
2N5307
Discrete POWER & Signal Technologies
2N5307
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 40 12 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N5307 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N5307
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C =10 mA, I B = 0 I C = 0.1 µA, I E = 0 I E = 0.1 µ A, IC = 0 VCB = 40 V, IE = 0 VCB = 40 V, IE = 0, TA = 100 °C VEB = 12 V, IC = 0 40 40 12 0.1 20 0.1 V V V µA µA µA
ON CHARACTERISTICS*
hFE VCE( sat) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 100 mA IC = 200 mA, I B = 0.2 mA IC = 200 mA, I B = 0.2 mA IC = 200 mA, VCE = 5.0 V 2,000 6,000 20,000 1.4 1.6 1.5 V V V
SMALL SIGNAL CHARACTERISTICS
Ccb hfe Collector-Base Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz IC =2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC =2.0 mA, VCE = 5.0 V, f = 10 MHz 2,000 6.0 10 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
.