RJH60D7DPM

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E www.DataSheet.net/ 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) iDF iDF(peak) Note1 Note2 PC j-c Note2 j-cd Note2 Tj Tstg Note1 Ratings 600 ±30 90 50 200 30 120 55 2.27 3.95 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Page 1 of 9 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60D7DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitte...