2N5320

2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5320 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 C Total Dissipation at T c = 25 o C Storage and Junction Temperature o Value 2N5321 75 75 50 5 1.2 2 1 1 10 -65 to 200 100 100 75 6 Unit V V V V A A A W W o C June 1997 1/4 2N5320/2N5321 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = 80 V V CB = 60 V V EB = 5 V V EB = 4 V I C = 100 µ A for 2N5320 for 2N5321 I C = 10 mA for 2N5320 for 2N5321 I...