RJH60F7DPQ-A0

Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching Features 1B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline 2B RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings 3B (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C 4B R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH60F7DPQ-A0 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector t...