RJH6087BDPK

Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) Low on-state voltage Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Symbol VCES VGES IC ic(peak) Note1 iDF(peak) Note2 PC θj-c Tj Tstg Ratings 600 ±30 50 100 100 223.2 0.56 150 –55 to +150 Unit V V A A A W °C / W °C °C Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature. R07DS0389EJ0100 Rev.1.00 May 11, 2011 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6087BDPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min — — 3.0 — — — — — — ...