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RJH6088BDPK Dataheets PDF



Part Number RJH6088BDPK
Manufacturers Renesas
Logo Renesas
Description High Speed Power Switching
Datasheet RJH6088BDPK DatasheetRJH6088BDPK Datasheet (PDF)

Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector .

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Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC θj-c Tj Tstg Ratings 600 ±30 60 120 120 268.8 0.465 150 –55 to +150 Unit V V A A A W °C / W °C °C Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature. R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6088BDPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min — — 3.0 — — — — — — — — — — — Typ — — — 2.65 3.2 2600 270 27 50 40 105 60 1.4 100 Max 10 ±1 5.5 3.5 — — — — — — — — 1.9 — Unit μA μA V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 30 A, VGE = 15 V Note3 IC = 60 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 V f = 1MHz IC = 40 A VCC = 300 V, VGE = 15 V Rg = 5 Ω Inductive Load IF = 30 A Note3 IF = 30 A diF/dt = 100 A/μs C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test www.DataSheet.net/ R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 2 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6088BDPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 120 Typical Output Characteristics Ta = 25°C Pulse Test Collector Current IC (A) 100 Collector Current IC (A) PW = 10 μs 100 80 60 40 8.5 V 8V 10 9V 10 V 12 V 15 V 7.5 V 1 7V VGE = 6.5 V 20 0 0.1 Tc = 25°C 1 shot pulse 0.01 0.1 1 10 100 1000 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Typical Transfer Characteristics 120 Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Ta = 25°C Pulse Test 4 IC = 60 A 3 30 A 2 10 A Collector Current IC (A) 100 80 60 40 20 0 VCE = 10 V Pulse Test Ta = 75°C 25°C –25°C www.DataSheet.net/ 20 A 1 4 8 12 16 20 2 4 6 8 10 12 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 6 VGE = 15 V Pulse Test IC = 120 A 5 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 8 4 60 A 3 30 A 20 A 10 A 6 IC = 10 mA 4 1 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 2 1 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Junction Temparature Tj (°C) R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 3 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6088BDPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage 10000 Cies Forward Current vs. Forward Voltage (Typical) 100 Diode Forward Current IF (A) Capacitance C (pF) 80 1000 60 100 Coes 40 VGE = 0 V Ta = 25°C Pulse Test 0 1 2 3 4 20 0 10 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 Cres 1 200 250 C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Collector to Emitter Voltage VCE (V) VGE VCC = 480 V 300 V 100 V 600 VCE 400 12 8 200 VCC = 480 V 300 V 100 V 0 20 40 60 4 IC = 60 A Ta = 25°C 80 0 100 Gate to Emitter Voltage VGE (V) 800 16 www.DataSheet.net/ 0 Gate Charge Qg (nc) R07DS0390EJ0100 Rev.1.00 May 11, 2011 Page 4 of 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH6088BDPK Switching Characteristics (Typical) (1) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C, Inductive load Preliminary Switching Characteristics (Typical) (2) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C Inductive load tf 100 td(off) 100 Eoff 10 Eon 1 td(on) tr 10 1 10 100 0.1 1 10 100 Collector Current IC (A) Collector Current IC (A) Switching Characteristics (Typical) (3) 1000 Switching Characteristics (Typical) (4) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) Eoff 1000 Eon 100 td(off) tf 100 tr td(on) 10 1 VCC = 300 V, VG.


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