Document
Preliminary Datasheet
RJH6088BDPK
Silicon N Channel IGBT High Speed Power Switching
Features
• Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
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Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC θj-c Tj Tstg Ratings 600 ±30 60 120 120 268.8 0.465 150 –55 to +150 Unit V V A A A W °C / W °C °C
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width limited by maximum junction temperature.
R07DS0390EJ0100 Rev.1.00 May 11, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH6088BDPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min — — 3.0 — — — — — — — — — — — Typ — — — 2.65 3.2 2600 270 27 50 40 105 60 1.4 100 Max 10 ±1 5.5 3.5 — — — — — — — — 1.9 — Unit μA μA V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 30 A, VGE = 15 V Note3 IC = 60 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 V f = 1MHz IC = 40 A VCC = 300 V, VGE = 15 V Rg = 5 Ω Inductive Load IF = 30 A Note3 IF = 30 A diF/dt = 100 A/μs
C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test
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R07DS0390EJ0100 Rev.1.00 May 11, 2011
Page 2 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH6088BDPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000 120
Typical Output Characteristics
Ta = 25°C Pulse Test
Collector Current IC (A)
100
Collector Current IC (A)
PW = 10 μs
100 80 60 40
8.5 V
8V
10
9V 10 V 12 V 15 V
7.5 V
1
7V VGE = 6.5 V
20 0
0.1 Tc = 25°C 1 shot pulse 0.01 0.1 1 10 100 1000
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
Typical Transfer Characteristics
120
Collector to Emitter Saturation Voltage VCE(sat) (V)
5 Ta = 25°C Pulse Test 4 IC = 60 A 3 30 A 2 10 A
Collector Current IC (A)
100 80 60 40 20 0
VCE = 10 V Pulse Test
Ta = 75°C 25°C –25°C
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20 A
1 4 8 12 16 20
2
4
6
8
10
12
Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
10
6 VGE = 15 V Pulse Test IC = 120 A
5
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
8
4 60 A 3 30 A 20 A 10 A
6
IC = 10 mA
4 1 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150
2
1 −25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Junction Temparature Tj (°C)
R07DS0390EJ0100 Rev.1.00 May 11, 2011
Page 3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH6088BDPK
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage
10000 Cies
Forward Current vs. Forward Voltage (Typical)
100
Diode Forward Current IF (A)
Capacitance C (pF)
80
1000
60
100
Coes
40 VGE = 0 V Ta = 25°C Pulse Test 0 1 2 3 4
20 0
10 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150
Cres
1
200
250
C-E Diode Forward Voltage VCEF (V)
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage VCE (V)
VGE VCC = 480 V 300 V 100 V
600 VCE 400
12
8
200
VCC = 480 V 300 V 100 V 0 20 40 60
4 IC = 60 A Ta = 25°C 80 0 100
Gate to Emitter Voltage VGE (V)
800
16
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0
Gate Charge Qg (nc)
R07DS0390EJ0100 Rev.1.00 May 11, 2011
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Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH6088BDPK
Switching Characteristics (Typical) (1)
1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C, Inductive load
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
1000
VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C Inductive load
tf 100
td(off)
100
Eoff
10 Eon 1
td(on) tr 10 1 10 100
0.1 1 10 100
Collector Current IC (A)
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
Switching Characteristics (Typical) (4)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
Eoff 1000 Eon 100
td(off) tf
100
tr
td(on)
10 1
VCC = 300 V, VG.