Preliminary Datasheet
RJH60T4DPQ-A0
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011
Outline
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