RJH1CV6DPQ-E0

Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 180 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0524EJ0500 Rev.5.00 Jun 12, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 1200 30 60 30 90 30 90 290 0.43 0.69 150 –55 to +150 Unit V V A A A A A W °C/W °C/W °C °C R07DS0524EJ0500 Rev.5.00 Jun 12, 2012 Page 1 of 9 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH1CV6DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) I...