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RJH1CD5DPQ-E0 Dataheets PDF



Part Number RJH1CD5DPQ-E0
Manufacturers Renesas
Logo Renesas
Description IGBT
Datasheet RJH1CD5DPQ-E0 DatasheetRJH1CD5DPQ-E0 Datasheet (PDF)

Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0517EJ0400 Rev.4.00 Jan 19, 2012 Ou.

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