RJH1CD6DPQ-E0

Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0518EJ0400 Rev.4.00 Jan 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 1200 30 50 25 75 25 75 297.6 0.42 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C R07DS0518EJ0400 Rev.4.00 Jan 19, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJH1CD6DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current...