IGBT
Preliminary Datasheet
RJH1CM5DPQ-E0
1200V - 15A - IGBT Application: Inverter
Features
Short circuit withstand time (1...
Description
Preliminary Datasheet
RJH1CM5DPQ-E0
1200V - 15A - IGBT Application: Inverter
Features
Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0520EJ0300 Rev.3.00 Jan 19, 2012
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
C
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
E
1 2
3
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Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 1200 30 30 15 60 15 60 260.4 0.48 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C
R07DS0520EJ0300 Rev.3.00 Jan 19, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH1CM5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Zero gate voltage collector current / Diode reverse curren...
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